Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device

摘要

A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a base area formed at a part of an upper portion of the epitaxial layer, and a poly-emitter area formed on a surface of the semiconductor substrate in the base area and including a polysilicon material. A BCD device includes a poly-emitter type bipolar transistor having a poly-emitter area including a polysilicon material and at least one of a CMOS and a DMOS formed on a single wafer together with the poly-emitter type bipolar transistor.