发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A resistor R1 formed by forming a first resistor layer 5a of 20 nm thickness including a tantalum nitride film at a concentration of nitrogen of less than 30 at % and a second resistor layer of 5 nm thickness including a tantalum nitride film at a concentration of nitrogen of 30 at % or more successively by a reactive DC sputtering method using tantalum as a sputtering target material and using a gas mixture of argon and nitrogen as a sputtering gas, and then fabricating the first and the second resistor layers, in which the resistance change ratio of the resistor can be suppressed to less than 1% even when a thermal load is applied in the interconnection step, by the provision of the upper region at a concentration of nitrogen of 30 at % or more. |
申请公布号 |
US8174355(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20080167606 |
申请日期 |
2008.07.03 |
申请人 |
TAKEDA KENICHI;FUJIWARA TSUYOSHI;IMAI TOSHINORI;HITACHI, LTD. |
发明人 |
TAKEDA KENICHI;FUJIWARA TSUYOSHI;IMAI TOSHINORI |
分类号 |
H01C1/012 |
主分类号 |
H01C1/012 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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