Method for fabricating semiconductor device

摘要

A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrogen source to a total flow rate of growth gas; and growing a GaN-based semiconductor layer on the AlN layer by MOVPE.