LIMITING STRAIN RELAXATION IN III-NITRIDE HETEROSTRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING

摘要

A method of fabricating a substrate for a semipolar Ill-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III- nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III- nitride substrate or epilayer including each of the mesas with a dimension / along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a Ill-nitride layer deposited heteroepitaxially and coherently on a non- patterned surface of the substrate or epilayer.