SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND VERTICAL-CAVITY SURFACE-EMITTING LASER

摘要

Provided is a semiconductor substrate for a vertical-cavity surface-emitting laser, which comprises a p-type crystalline layer, and wherein the p-type crystalline layer is composed of a 3-5 group compound semiconductor, comprises carbon atoms as p-type impurity atoms, and comprises hydrogen atoms with a concentration of not less than 6 × 1017 cm-3 and not more than 6 × 1019 cm-3.