| 摘要 |
A semiconductor light emitting device (100) includes: a light emission structure (120) including a first conductive semiconductor layer (121), an active layer (122), and a second conductive semiconductor layer (123); and a wavelength conversion layer (130) formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void (130a) therein. |
