| 摘要 |
A crosspoint array is made up of a plurality of bitlines and wordlines and a plurality of crossbar elements, with each crossbar element being disposed between a bitline and a wordline, and each crossbar element comprising at least a phase change material used as a rectifier in series with a solid electrolyte used as an asymmetric resistive memory element. The crossbar elements are responsive to the following voltages: a first set of voltages to transition the phase change material in the crossbar elements from an OFF state to an ON state; a second set of voltages to read or program the solid electrolyte, and a third set of voltages to transition the phase change material from an ON state to an OFF state. |
