发明名称 |
Copper interconnection structures and semiconductor devices |
摘要 |
A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak. |
申请公布号 |
US8169079(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20090589949 |
申请日期 |
2009.10.30 |
申请人 |
KOIKE JUNICHI;SHIBATOMI AKIHIRO;ADVANCED INTERCONNECT MATERIALS, LLC |
发明人 |
KOIKE JUNICHI;SHIBATOMI AKIHIRO |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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