发明名称 |
Three-Dimensional Semiconductor Devices |
摘要 |
Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.
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申请公布号 |
US2012098050(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113280759 |
申请日期 |
2011.10.25 |
申请人 |
SHIM JAE-JOO;KIM KYOUNG-HOON;LEE WOONKYUNG;CHO WONSEOK;CHO HOOSUNG;PARK JINTAEK;KIM JONG-YEON;HWANG SUNG-MIN |
发明人 |
SHIM JAE-JOO;KIM KYOUNG-HOON;LEE WOONKYUNG;CHO WONSEOK;CHO HOOSUNG;PARK JINTAEK;KIM JONG-YEON;HWANG SUNG-MIN |
分类号 |
H01L29/792;H01L29/78 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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