| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can solve the problems of thermal disturbance in an unselected cell, variation in applied voltages, deterioration in a storage element at reading time, or the like due to influences caused by parasitic resistance or parasitic capacitance of a drive circuit on memory cells. <P>SOLUTION: A capacitor (C) is provided above or below a memory cell (MC) having a storage element to which storage information is to be written by a current and a selection element connected to the storage element, and storage information is written by a charge accumulated in the capacitor into the storage element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
