| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve heat resistance of a resistance change layer, as compared to using amorphous silicon as a resistance change layer. <P>SOLUTION: A nonvolatile resistance change element comprises a first electrode 1, a second electrode 2, and a resistance change layer 3 disposed between the first electrode 1 and the second electrode 2. The resistance change layer 3 principally contains a polycrystalline semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
