| 摘要 |
A nonvolatile memory device includes a cell string including a plurality of memory cells connected in series, a bit line connected to the cell string, a voltage sensing unit configured to apply a verify precharge voltage to the bit line in response to a voltage of a sensing node before a verify operation, a voltage transmission unit configured to apply a voltage of the bit line to the sensing node in a verify operation, and a page buffer configured to determine a voltage of the sensing node in response to data stored therein before a verify operation and to change the data in response to a voltage level of the sensing node in the verify operation. |
