| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can resolve problems of current collapse and long-term reliability by alleviating electric field concentration generated at an electrode end when a reverse voltage is applied to a device, such as an SBD (Schottky Barrier Diode), an HEMT (High Electron Mobility Transistor), and the like. <P>SOLUTION: A semiconductor device 1 has: an electron transit layer 11 having a nitride compound semiconductor layer; an electron supply layer 12 formed on the electron transit layer 11 and being made of a nitride compound semiconductor; a first electrode 13 formed on the electron supply layer 12; a second electrode 14 formed on the electron supply layer 12 separately from the first electrode 13; a first conductor 15 formed so as to be opposed to the first electrode 13 with intervening the electron transit layer 11 and the electron supply layer 12 therebetween and having the same potential as the first electrode 13; and a second conductor 16 formed so as to be opposed to the second electrode 14 with intervening the electron transit layer 11 and the electron supply layer 12 therebetween and having the same potential as the second electrode 14. <P>COPYRIGHT: (C)2012,JPO&INPIT |
