SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a vertical semiconductor device having an excellent breakdown voltage performance while obtaining low on-resistance, and to provide a method of manufacturing the same.

SOLUTION: A semiconductor device comprises: an opening 28 reaching an n--type GaN drift layer 4; a regrowth layer 27 located so as to cover the wall surfaces of the opening; a p-type GaN barrier layer 6; a gate electrode G; and source electrodes S. Channels are formed by a two-dimensional electron gas occurring in the interface between an electron transit layer 22 and an electron supply layer 26 in the electron transit layer 22. The p-type GaN barrier layer 6 is a surface layer of a GaN-based stack 15. The source electrodes S are located in contact with the regrowth layer 27 and the p-type GaN barrier layer 6.

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