| 摘要 |
1,219,299. Field effect transistor amplifiers. INDUSTRIAL RESEARCH PRODUCTS Inc. 28 Nov., 1968 [3 July, 1968], No. 56418/68. Heading H3T. A field effect transistor acting as an amplifier has a first electrode (e.g. 114) connected to one terminal of a power supply, a third electrode (e.g. 116) connected to the other terminal of the supply through the load 122, the input connected between second and third electrodes through a path which excludes the load, and bias means (e.g. 130) connected between the second electrode and the load terminal of the power supply. This arrangement enables pinchoff to be achieved with a lower supply voltage. Using the diodes 130 as the bias supply (instead of a resistor, as in Fig. 2, not shown) provides for leakage current a high resistance which will become lower as ageing occurs. A diode 132 prevents a blocking bias building up at the gate. |
