Method for manufacturing semiconductor device

摘要

The invention provides a method for manufacturing a semiconductor device, comprising the steps of forming an opening in a first insulating film (301) in contact with a bond substrate (300) so as to expose the bond substrate (300); forming a recess (304) in the bond substrate (300) on the opening; partially removing the first insulating film (301) so that the opening remains, thereby partially exposing the bond substrate (300) provided with the recess (304); processing the bond substrate (300) provided with the recess (304), in the partially exposed region, thereby forming a projection (305) including the recess (304) on the bond substrate (300); bonding the bond substrate (300) to a base substrate (308) provided with a second insulating film (309) so that the first insulating film (301) is in contact with the second insulating film (309); splitting the bond substrate (300), thereby transferring a semiconductor film (310) which is a region of the projection (305) to the base substrate (308) with the first insulating film (301); and processing the transferred semiconductor film (310) into a desired shape.