发明名称 |
ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device with high electric characteristics is provided. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas including an HBr gas, a CF4 gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Etching for forming a back channel portion of a thin film transistor is performed with the method for etching, whereby high electric characteristics can be provided for the thin film transistor. |
申请公布号 |
US2012094445(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113273267 |
申请日期 |
2011.10.14 |
申请人 |
SASAGAWA SHINYA;FUJIKI HIROSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SASAGAWA SHINYA;FUJIKI HIROSHI |
分类号 |
H01L21/336;H01L21/20;H01L21/306 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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