| 摘要 |
A polysilicon type TFT, and a TFT substrate having the same and a method for manufacturing the same are provided to minimize kink current and to prevent abnormal operation of a driving circuit by forming an active layer having a first and a second channel regions of different width. A TFT substrate includes a gate line, a data line(104) defined with a pixel region, a pixel electrode(122) formed at the pixel region, an active layer(114) having at least two channel regions with different width, and a polysilicon type TFT connected to the pixel electrode. The polysilicon type TFT further includes gate electrodes(106a,106b) connected with the gate line, a source electrode(108) connected with the data line, and a drain electrode(110) connected with the pixel electrode between the two channel regions.
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