ISOLATED COMPLEMENTARY MOS DEVICE IN EPI-LESS SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a process of fabricating a semiconductor device which can implement a high packing density.

SOLUTION: A structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate 240 that does not include an epitaxial layer. Following the implantation, the structure is exposed to a very limited thermal budget so that the dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of dopant.

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