发明名称 |
MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STORAGE ELEMENTS AND METHODS OF FORMING THE SAME |
摘要 |
In some embodiments, a memory array is provided that includes (1) a first memory cell having (a) a first conductive line; (b) a first bipolar storage element formed above the first conductive line; and (c) a second conductive line formed above the first bipolar storage element; and (2) a second memory cell formed above the first memory cell and having (a) a second bipolar storage element formed above the second conductive line; and (b) a third conductive line formed above the second bipolar storage element. The first and second memory cells share the second conductive line; the first bipolar storage element has a first storage element polarity orientation within the first memory cell; the second bipolar storage element has a second storage element polarity orientation within the second memory cell; and the second storage element polarity orientation is opposite the first storage element polarity orientation. Numerous other aspects are provided. |
申请公布号 |
US2012091427(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US20100904802 |
申请日期 |
2010.10.14 |
申请人 |
CHEN YUNG-TIN;MIHNEA ANDREI;SCHEUERLEIN ROY E.;FASOLI LUCA |
发明人 |
CHEN YUNG-TIN;MIHNEA ANDREI;SCHEUERLEIN ROY E.;FASOLI LUCA |
分类号 |
H01L45/00;H01L21/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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