发明名称 |
METHOD FOR MEASURING OVERLAY OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: A method for measuring the overlay of a semiconductor device is provided to improve overlay accuracy by reducing the generation of noise by using a light source which is polarized in the overlay reading. CONSTITUTION: An overlay vernier(100) comprises a plurality of first vernier patterns(100a) and a plurality of second vernier patterns(100b). The first vernier pattern and the second vernier pattern are formed into a bar shape. The plurality of first vernier patterns is extended to a y-shaft direction and is arranged according to an x-shaft direction. The plurality of second vernier patterns is extended to the x-shaft direction and is arranged according to the y-shaft direction. A polarized light source(110) is irradiated on the overlay vernier. An image signal of the overlay vernier is read. An overlay value is measured through the image signal.</p> |
申请公布号 |
KR20120037257(A) |
申请公布日期 |
2012.04.19 |
申请号 |
KR20100098899 |
申请日期 |
2010.10.11 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK, JUN TAEK;LEE, BYOUNG HOON |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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