发明名称 |
Method of fabricating array substrate |
摘要 |
A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer. |
申请公布号 |
US8158469(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20100843738 |
申请日期 |
2010.07.26 |
申请人 |
LEE HONG-KOO;KIM SUNG-KI;BAE JUN-HYEON;KIM KI-TAE;LG DISPLAY CO., LTD. |
发明人 |
LEE HONG-KOO;KIM SUNG-KI;BAE JUN-HYEON;KIM KI-TAE |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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