METHOD OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTOR HAVING HIGH POWER USING IMPURITY INJECTION

摘要

PURPOSE: A high power/electron mobility transistor manufacturing method which uses an impurity injection method is provided to reduce a leakage current by increasing electrical resistance of a material layer which includes two-dimensional electron gas. CONSTITUTION: A first material layer is arranged on a substrate(30). The electrical resistance of the first material layer is increased. A source pattern(38S) and a drain pattern(38D) are formed on the first material layer. A gate insulating layer(42) is arranged on the first material layer. A gate electrode, a source electrode(44), and a drain electrode(46) are respectively formed on the gate insulating layer, the source pattern, and the drain pattern.