METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to improve a property of a semiconductor device by easily forming a pattern required for 6F2 structure in case of applying an element isolation film of a line type. CONSTITUTION: A first trench(T1) is included in a semiconductor substrate. A second trench(T2) includes a pad unit(P) having an end part expanded to the first trench. A third trench(T3) is formed to be separated from the first trench and the second trench. A fourth trench is vertically connected the third trench. The pad part is formed to be separated from the first trench and the third trench.