FILM-FORMATION DEVICE AND FILM-FORMATION METHOD

摘要

A film-formation device that forms a gas-barrier layered film that exhibits bending resistance and sufficient gas-barrier performance. Said film-formation device has: a vacuum chamber that contains a substrate; a gas-supply device that supplies a film-forming gas to the vacuum chamber, said film-forming gas containing an organic metal compound from which a thin film will be formed and a reaction gas that reacts with said organic metal compound; a pair of electrodes arranged inside the vacuum chamber; a plasma-generation power supply that applies AC power to the pair of electrodes, thereby generating a plasma of the film-forming gas; and a control unit. The control unit controls the gas-supply device and/or the plasma-generation power supply, switching between: first reaction conditions under which the organic metal compound and the reaction gas react to produce a compound that contains a metallic or metalloid element from the organic metal compound and does not contain carbon; and second reaction conditions under which the organic metal compound and the reaction gas react to produce a carbon-containing compound that contains carbon, and a metallic or metalloid element, from the organic metal compound.