| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the thickness of a single-crystal semiconductor layer in a semiconductor substrate including the single-crystal semiconductor layer such as an SOI substrate, and improve the mass productivity of the semiconductor substrate. <P>SOLUTION: An amorphous semiconductor layer is formed on a single-crystal semiconductor substrate, and then the substrate is attached to a support substrate with an insulation layer interposed therebetween, so that a part of the single-crystal semiconductor substrate is transferred onto the support substrate together with the amorphous semiconductor layer. Then, the amorphous semiconductor layer is subjected to solid-phase epitaxial growth, whereby a thick single-crystal semiconductor layer is formed on the support substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
