| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves adhesion of a barrier metal layer to a metal wiring and suppresses resistance of the metal wiring. <P>SOLUTION: After a barrier metal layer 20 is formed in concave portions 16, 17 formed in an interlayer insulating film 15, a Cu wiring layer 23 is formed in the concave portions 16, 17. In a step of forming the barrier metal layer 20, after a first TiN<SB POS="POST">x</SB>film 18, which contains more than 50 atomic % of Ti, is formed in the concave portions 16, 17, a second TiN<SB POS="POST">x</SB>film (or Ti film) 19, which contains a greater amount of Ti than the first TiN<SB POS="POST">x</SB>film 18, is formed such that the second TiN<SB POS="POST">x</SB>film 19 is formed on a bottom portion in a relatively greater amount than on a side wall portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
