CLEANING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method capable of shortening a cleaning processing time and preventing residual materials from remaining in a processing chamber after cleaning.

SOLUTION: The method comprises a step for setting the temperature of a reaction tube after a thin film is formed on a substrate in the reaction tube consisting of heat-resistant nonmetallic members to first temperature and for removing adhered matter including a thin film which is adhered to an inner wall of the reaction tube by supplying a cleaning gas into the reaction tube; and a step for setting the temperature of the reaction tube after the adhered matter is removed to the second temperature being higher than the first temperature and for removing residual materials on a wall surface of the reaction tube by supplying a cleaning gas to the reaction tube.

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