发明名称 |
NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING SAME |
摘要 |
A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates. |
申请公布号 |
EP2439316(A1) |
申请公布日期 |
2012.04.11 |
申请号 |
EP20100783347 |
申请日期 |
2010.05.31 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
KUBO, SHUICHI;SHIMOYAMA, KENJI;KIYOMI, KAZUMASA;FUJITO, KENJI;MIKAWA, YUTAKA |
分类号 |
C30B29/38;C23C16/34;C30B25/20;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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