| 摘要 |
PURPOSE: A manufacturing method of a phase change memory apparatus is provided to prevent a lifting fault and a void between a switching device and an ohmic contact layer by increasing a contact area between the switching device and the ohmic contact layer. CONSTITUTION: An active region(112) is formed on a semiconductor substrate(110). A poly silicon material film is formed on the semiconductor substrate in which the active region is formed. A switching device(120) is formed by etching the poly silicon material film with a lower part etching width which is larger than an upper part etching width. An ohmic contact layer(140) is formed on the switching device. A heating electrode(145) is formed on the ohmic contact layer.
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