| 摘要 |
PURPOSE: A phase change memory device is provided to improve sensing margin by removing a coupling noise in a sense amplifier operation. CONSTITUTION: A sense amplifier driving unit(120,220) compares an input voltage inputted to a input signal line with a reference voltage. The sense amplifier driving unit amplifies an output signal in response to a comparison result. An input unit receives an input signal from the input signal line and transmits the input signal to the sense amplifier driving unit. A coupling preventing unit(140,240) is comprised of a plurality of MOS transistors which share a bulk bias. The coupling preventing unit is connected between the sense amplifier driving unit and the input unit and controls sensing margin in response to the level of the input signal.
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