发明名称 |
Shallow Trench Isolation Chemical Mechanical Planarization |
摘要 |
A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface. |
申请公布号 |
US2012083122(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113012142 |
申请日期 |
2011.01.24 |
申请人 |
CHARNS LESLIE;CUMMINGS JASON E.;HUPKA LUKASZ J.;KOLI DINESH R.;KONNO TOMOHISA;KRISHNAN MAHADEVAIYER;LOFARO MICHAEL F.;NALASKOWSKI JAKUB W.;NODA MASAHIRO;PENIGALAPATI DINESH K.;YAMANAKA TATSUYA;JSR CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHARNS LESLIE;CUMMINGS JASON E.;HUPKA LUKASZ J.;KOLI DINESH R.;KONNO TOMOHISA;KRISHNAN MAHADEVAIYER;LOFARO MICHAEL F.;NALASKOWSKI JAKUB W.;NODA MASAHIRO;PENIGALAPATI DINESH K.;YAMANAKA TATSUYA |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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