REACTOR WITH CLAMP FOR PREVENTING DEPOSITION IN BACKSIDE OF WAFER

摘要

The equipment cleansing cycle is increased, the semiconductor manufacture cost can be reduced and the simplification of process can be achieved by preventing the wafer backside deposition when a depositing process is performed by ALD or the CVD method. A reactor is comprised of a susceptor for mounting the wafer(103) on which the deposition process is performed; the processing gas supply device spraying the process gas on wafer; the clamp(105) spraying the protecting gas for preventing diffusion of the process gas to the backplane of wafer, arranged so that edge and part of wafer be overlapped; the supply port supplying the protecting gas to the blow nozzle; the pumping port discharging the pumped protecting gas from the pumping nozzle to outside; the reactor having at least two the supply port and pumping port. The protecting gas is the inert gas.