| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of using a purge gas including hydrogen or hydrogen chloride and suppressing SiC heater degradation in a film deposition device provided with an SiC heater. <P>SOLUTION: A film deposition device 10 for growing a silicon film on the surface of a wafer 70 comprises: wafer stages 14 and 16 which can be installed in the wafer 70; an SiC heater 42 which is disposed in the wafer stage and heats the wafer 70; material gas supply means 60, 62, and 64 for supplying the material gas of the silicon film to the film-formed surface of the wafer 70; purge gas flow channels 32, 30, and 36 which are formed in the wafer stage and supply the purge gas including hydrogen or hydrogen chloride to at least a part of the rear surface and the outer peripheral surface of the wafer; and inert gas flow channels 44 and 48 which are formed in the wafer stage and supply an inert gas to the SiC heater 42. <P>COPYRIGHT: (C)2012,JPO&INPIT |
