<p>A plasma processing apparatus includes a chamber (20) and a target (25) on the chamber (20). The surface of the target (25) is contacted with the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conduction sub-chamber (22), which are superposed. The first conduction sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conduction sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed in the surface of the coil during the sputtering process can be resolved by using the plasma processing apparatus.</p>
