PHASE-CHANGING MEMORY STRUCTURE HAVING LOW-K DIELECTRIC THERMAL INSULATION MATERIAL AND METHOD FOR THE SAME

摘要

A phase-changing memory structure having a low-k dielectric thermal insulation material and method for the same are disclosed, a phase-changing memory unit of which comprises a diode, a heating electrode, a reverse phase-changing resistor, a top-electrode and the like. The heating electrode and the reverse phase-changing resistor are located in a low-k dielectric thermal insulation layer. An anti-spreading dielectric layer is arranged between the reverse phase-changing resistor and the low-k dielectric thermal insulation layer. The structure uses the low-k dielectric material as the thermal insulation material to avoid mutual influence among the phase-changing memory units, improve the reliability of the device and remove the influence of the phase-changing RAM data retentivity caused by temperature and pressure when the amorphous is changed to the polycrystal. The anti-spreading dielectric layer is prepared between the low-k dielectric material and the phase-changing material, so that the element in the phase-changing material can be prevented from spreading to the low-k dielectric material. The manufacturing process of the structure is compatible with a CMOS standard process, and the structure is polished by the low pressure and low corrosion chemical mechanical polishing process.