| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device whose malfunction can be avoided and which can be stably operated even if the device has a multilayer structure in which each layer has different electrical characteristics. <P>SOLUTION: A nonvolatile semiconductor memory device includes: a three-dimensional cell array block formed by laminating multiple cell array layers, in each of which multiple first wires, multiple second wires which intersect with the multiple first wires, and memory cells each of which is connected to between the first and second wires at an intersecting part thereof and is formed of a series circuit composed of an electrically re-writable variable resistive element which stores a resistance value as data in a nonvolatile manner and a non-ohmic element are arranged in a matrix; and a reading control circuit to read data from the memory cell with one or more cell array layers having the memory cells common in electrical characteristics being the same group on a condition set in each group. <P>COPYRIGHT: (C)2012,JPO&INPIT |
