| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce memory access time of nonvolatile memory device so that a nonvolatile memory can compete with a volatile memory. <P>SOLUTION: In a nonvolatile memory, read access is changed by changing order of executing a specific part of read access 100. A pre-active command consists of row address writing operation 130. An activation command consists of many operations deriving a read command. An arrow 150 shows that a bit line pre-charge and column selecting operation 136 is transferred from the activation command to the pre-active command. Such transfer extends duration of pre-active command, but reduces duration of activation command. If the number of executed activation commands exceeds the number of executed pre-active commands, then duration of read access is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
