DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS

摘要

A memristor (100) includes a first electrode (102) formed of a first metal, a second electrode (104) formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer (110) positioned between the first electrode (102) and the second electrode (104). The switching layer (110) is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer (110) is in direct contact with the first electrode (102) and in which at least one conduction channel (120) is configured to be formed in the switching layer (110) from an interaction between the first metal and the second nonmetal material.