发明名称 |
Group III nitride compound semiconductor stacked structure |
摘要 |
An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2. |
申请公布号 |
US8148712(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20070300306 |
申请日期 |
2007.05.08 |
申请人 |
MIKI HISAYUKI;SAKAI HIROMITSU;HANAWA KENZO;YOKOYAMA YASUNORI;SASAKI YASUMASA;KAJI HIROAKI;SHOWA DENKO K.K. |
发明人 |
MIKI HISAYUKI;SAKAI HIROMITSU;HANAWA KENZO;YOKOYAMA YASUNORI;SASAKI YASUMASA;KAJI HIROAKI |
分类号 |
H01L29/06;H01L33/00;H01L33/16 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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