发明名称 |
Resistive random access memory |
摘要 |
A resistive memory device includes a first electrode, a resistive oxidation structure and a second electrode. The resistive oxidation structure has sets of oxidation layers stacked on the first electrode. Each set is made up of a first metal oxide layer and a second metal oxide layer which is disposed on and is thinner than the first metal oxide layer. The first metal oxidation layer of the first one of the sets of oxidation layers contacts an upper surface of the first electrode. The second electrode is formed on the resistive oxidation structure. The resistance of the oxidation structure can be changed by an electric field.
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申请公布号 |
US8148765(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20090649413 |
申请日期 |
2009.12.30 |
申请人 |
SHIM HYUN-JUN;LEE HAN-SIN;BAEK IN-GYU;ZHAO JINSHI;YIM EUN-KYUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM HYUN-JUN;LEE HAN-SIN;BAEK IN-GYU;ZHAO JINSHI;YIM EUN-KYUNG |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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