PROCEDE POUR LA REALISATION D'UN MATERIAU SEMI-CONDUCTEUR CRISTALLISE

摘要

The process comprises synthesizing a crystallized compound semiconductor material of type II-VI material by melting and reacting between each of its constituents, crystallizing the material in liquid form by cooling a sealed ampoule (1) according to a specified temperature gradient, increasing the proportion of a filler of one of the constituents of the material beyond the stoichiometric proportions of the material, and subjecting the entire ampoule to a temperature greater than or equal to the melting temperature of the semiconductor material. The process comprises synthesizing a crystallized compound semiconductor material of type II-VI material by melting and reacting between each of its constituents, crystallizing the material in liquid form by cooling a sealed ampoule (1) according to a specified temperature gradient, increasing the proportion of a filler of one of the constituents of the material beyond the stoichiometric proportions of the material, subjecting the entire ampoule to a temperature greater than or equal to the melting temperature of the semiconductor material, inducing the effective fusion of the filler and the reaction of its constituents between them when in liquid form and the transformation of the excess constituent into dry steam, subjecting the ampoule to a low temperature gradient and to a progressive lowering of the temperature, specific to induce the crystallization of the compound semiconductor material resulting when in liquid form, in stoichiometric proportion, the excess constituent residing in the form of dry steam, subjecting the part of the ampoule away from the crystallized semiconductor materials to a drop of temperature capable of modifying the steam pressure system of the excess constituent to supply the constituent to a saturation steam system, and cooling the material to room temperature. The constituents are placed in elemental form constituting the filler in the ampoule. The quantity of the excess constituent is at most equal to the quantity corresponding to the establishment at a temperature greater than or equal to the melting temperature of the compound semiconductor material to be prepared and at high pressure of the constituent, then in the form of dry steam, less than the pressure of the bursting of the ampoule, determined by application of Mariotte law. The sealed ampoule comprises two zones having a zone of larger diameter for receiving the filler to be crystallized, a zone of smaller diameter in continuity with the zone of largest diameter subjected to the localized management of temperature and consequently in changing of nature dry steam having saturation steam and the steam from the excess constituent.