| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of satisfying desired product characteristics even when the film thickness of a resist residual film varies. <P>SOLUTION: The manufacturing method of a semiconductor device includes: a step of exposing a resist layer 16 uniformly formed on a semiconductor substrate 11 by using a grating mask 17 provided with a transmission region 17A where transmissivity lowers toward a charge transfer direction; a step of forming a resist residual film 18 whose film thickness is changed in accordance with the transmissivity of the grating mask 17 by developing the exposed resist layer 16; and a step of forming a plurality of impurity layers 13 forming internal potentials including a prescribed reference potential Pb and a level difference potential Ps within the semiconductor substrate 11 by implanting ions 20 using an ion implanter 19 to the semiconductor substrate 11 through the resist residual film 18. The acceleration voltage and dosage of the ion implanter 19 are turned to such acceleration voltage and dosage that the error of the internal potential due to the film thickness error of the resist residual film 18 is within an allowable range. <P>COPYRIGHT: (C)2012,JPO&INPIT |
