发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device fabrication method includes forming a first gate electrode via a first gate insulating film on a P-type semiconductor region formed in a surface portion of a semiconductor substrate; forming a second gate electrode via a second gate insulating film on an N-type semiconductor region formed in the surface portion of the semiconductor substrate; forming a first insulating film; forming a second insulating film; forming a mask having a pattern corresponding to the P-type semiconductor region; etching away the second insulating film by using the mask; removing the mask; and forming a first gate electrode sidewall insulating film and forming a second gate electrode sidewall insulating film. |
申请公布号 |
US2012074504(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113289111 |
申请日期 |
2011.11.04 |
申请人 |
SATO MOTOYUKI;WATANABE TAKESHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO MOTOYUKI;WATANABE TAKESHI |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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