| 摘要 |
<P>PROBLEM TO BE SOLVED: To separately manufacture thin-film transistors whose transistor characteristics are less likely to vary. <P>SOLUTION: When forming a driving transistor 6 that is a first thin-film transistor having a bottom gate structure and a switch transistor 5 that is a second thin-film transistor having a top gate structure, a step of forming a first gate electrode 6a of the driving transistor 6 and a second light-shielding film 5e of the switch transistor 5 between a substrate 10 and a first insulating film 11, and a step of forming a second gate electrode 5a of the switch transistor 5 and a first light-shielding film 6e of the driving transistor 6 between a second insulating film 12 and a passivation film 14 are separately performed. The remaining thin-film transistor structures are formed by a common step. Thus, in such a manufacturing method that includes steps other than the steps of forming the gate electrodes (6a and 5a) and the light-shielding films (6e and 5e) as common manufacturing steps, the driving transistor 6 and the switch transistor 5 can be separately manufactured. <P>COPYRIGHT: (C)2012,JPO&INPIT |
