发明名称 WAFER PROFILE MODIFICATION THROUGH HOT/COLD TEMPERATURE ZONES ON PEDESTAL FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface.
申请公布号 US2012074126(A1) 申请公布日期 2012.03.29
申请号 US201113072546 申请日期 2011.03.25
申请人 APPLIED MATERIALS, INC. 发明人 BANG WON B.;TAN TIEN FAK;PHI SON M.;LUBOMIRSKY DMITRY
分类号 H05B3/68 主分类号 H05B3/68
代理机构 代理人
主权项
地址