发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
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申请公布号 |
US2012073500(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113311760 |
申请日期 |
2011.12.06 |
申请人 |
SATO TAKETOSHI;TSUNEDA MASAYUKI |
发明人 |
SATO TAKETOSHI;TSUNEDA MASAYUKI |
分类号 |
H01L21/00;C23C16/455;C23C16/52 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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