发明名称 |
QUASI-VERTICAL GATED NPN-PNP ESD PROTECTION DEVICE |
摘要 |
Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a desired holding voltage and a substantially homogenous current flow, and is thus highly robust. The device can be fashioned in a cost effective manner by being formed during a BiCMOS or Smart Power fabrication process. |
申请公布号 |
US2012074458(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113171040 |
申请日期 |
2011.06.28 |
申请人 |
DENISON MARIE;HAO PINGHAI;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DENISON MARIE;HAO PINGHAI |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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