Semiconductor Device and Method of Forming Vertical Interconnect Structure Between Non-Linear Portions of Conductive Layers

摘要

A semiconductor device is made by forming a first conductive layer over a first temporary carrier having rounded indentations. The first conductive layer has a non-linear portion due to the rounded indentations. A bump is formed over the non-linear portion of the first conductive layer. A semiconductor die is mounted over the carrier. A second conductive layer is formed over a second temporary carrier having rounded indentations. The second conductive layer has a non-linear portion due to the rounded indentations. The second carrier is mounted over the bump. An encapsulant is deposited between the first and second temporary carriers around the first semiconductor die. The first and second carriers are removed to leave the first and second conductive layers. A conductive via is formed through the first conductive layer and encapsulant to electrically connect to a contact pad on the first semiconductor die.