| 摘要 |
<p>PURPOSE: A highly integrated nonvolatile memory and a manufacturing method thereof are provided to integrate a plurality of memory cells with high density by using a vertical space through the laminate of metal layers with a multilayer structure on a side of a semiconductor pillar. CONSTITUTION: A semiconductor pillar(490) is vertically formed on a semiconductor substrate and is comprised of a first diffusion area(312) and a second diffusion area(311). An intermediate layer(335) is laminated on a side of a semiconductor pillar. A multilayered metal layer(390) crosses the side of the semiconductor pillar. A metal layer(358,368) is connected to the upper side of the semiconductor pillar.</p> |
